features trenchfet power mosfet pwm optimized 100% r g tested applications dc/dc converters ? high-side, desktop cpu core synchronous rectifiers sur50n03-12p vishay siliconix new product document number: 72774 s-32695?rev. a, 19-jan-04 www.vishay.com 1 n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) a 30 0.012 @ v gs = 10 v 17.5 30 0.0175 @ v gs = 4.5 v 14.5 d g s n-channel mosfet to-252 reverse lead dpak top view drain connected to tab ordering information: sur50n03-12p?e3 sur50n03-12p-t4?e3 (altrenate tape orientation) s gd absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t c = 25 c 47 continuous drain current a t a = 25 c i d 17.5 t a = 100 c d 12.4 a pulsed drain current i dm 40 a continuous source current (diode conduction) a i s 5 single pulse a valanche current l = 0 1 mh i as 30 single pulse a valanche energy l = 0.1 mh e as 45 mj maximum power dissipation t c = 25 c p d 46.8 w maximum power dissipation t a = 25 c p d 6.5 a w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 10 sec r 18 23 maximum junction-to-ambient a steady state r thja 40 50 c/w maximum junction-to-case r thjc 2.6 3.2 c/w notes a. surface mounted on fr4 board, t 10 sec.
sur50n03-12p vishay siliconix new product www.vishay.com 2 document number: 72774 s-32695?rev. a, 19-jan-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 40 a v gs = 10 v, i d = 20 a 0.010 0.012 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a, t j = 125 c 0.017 drain source on state resistance r ds(on) v gs = 4.5 v, i d = 15 a 0.0138 0.0175 forward transconductance b g fs v ds = 15 v, i d = 20 a 15 s dynamic a input capacitance c iss 1600 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 285 pf reverse transfer capacitance c rss 140 p total gate charge c q g 13 20 gate-source charge c q gs v ds = 15 v, v gs = 4.5 v, i d = 50 a 6.0 nc gate-drain charge c q gd v ds 15 v, v gs 4.5 v, i d 50 a 5.0 nc gate resistance r g 0.70 1.5 2.50 turn-on delay time c t d(on) 9 15 rise time c t r v dd = 15 v, r l = 0.3 15 25 ns turn-off delay time c t d(off) v dd = 15 v , r l = 0 . 3 i d 50 a, v gen = 10 v, r g = 2.5 20 30 ns fall time c t f g 12 20 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 40 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 25 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. typical characteristics (25 c unless noted) 0 20 40 60 80 012345 0 20 40 60 80 0123456 output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 25 c ? 55 c t c = 125 c v gs = 10 thru 5 v 3 v 4 v
sur50n03-12p vishay siliconix new product document number: 72774 s-32695?rev. a, 19-jan-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0 6 12 18 24 30 0.00 0.01 0.02 0.03 0.04 0.05 0 20406080 0 20 40 60 80 0 1020304050 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 capacitance gate charge transconductance on-resistance vs. drain current ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs v ds = 15 v i d = 50 a v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c c iss i d ? drain current (a) c oss (normalized) ? on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 15 a t j = 25 c t j = 150 c 0 10
sur50n03-12p vishay siliconix new product www.vishay.com 4 document number: 72774 s-32695?rev. a, 19-jan-04 thermal ratings 0 4 8 12 16 20 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt t emperature t a ? ambient t emperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc, 100 s 10, 100 s 1 s 1000 100 0.1 10 s limited by r ds(on) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 0.2 0.1 duty cycle = 0.5 100 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.05 0.02 single pulse
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
